Enhanced RF Characteristics of a 0.5 pm High Voltage nMOSFET (HVMOS) in a Standard CMOS Technology

In this work a technique to heighten the breakdown voltage and the transition frequency (fT) in standard MOS technology is presented. By using an optimized extended drift region at the drain, a CMOS FET can achieve higher breakdown voltage. To enhance the operation frequency, the standard analog/digital pads were modified to decrease coupling effects with the substrate. These two enhancements make the proposed MOSFET structure suitable for mid-power RF applications. Experimental measurements on a High Voltage MOSFET (HVMOS FET) show a breakdown voltage of 20 V, IP3 of +30.2 dBm and an improvement of 31.9% and 34.7% of the extrinsic fT and f max, respectively.

Bibliographic Details

Main Authors:	Saavedra-Gómez,H. J., Loo-Yau,J. R., del Valle-Padilla,Juan Luis, Moreno,P., Sandoval-lbarra,F., Reynoso-Hernández,J.A.
Format:	Digital revista
Language:	English
Published:	Universidad Nacional Autónoma de México, Instituto de Ciencias Aplicadas y Tecnología 2014
Online Access:	http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S1665-64232014000300012
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