2x voltage generator analytical model
Since portable systems and processing power applications demand efficient power consumption, this paper deals with the development of an analytical model based on the on-resistance effect of MOS switches to design a silicon-based char-pump voltage generator (VG). This model that is developed for adding design parameters under the designer's control is a useful design tool to quickly estimate the VG's performance in the time domain. Numerical results are compared with transistor-level simulation to validate not only the analytical model, but also to estimate the integration area of a silicon-based VG. It was found that an on-resistance ranging from zero to 50 Ω presents a relative error of 2%. Experimental results show the usefulness of the proposed design model.
| Main Authors: | , , , |
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| Format: | Digital revista |
| Language: | English |
| Published: |
Universidad Nacional Autónoma de México, Instituto de Ciencias Aplicadas y Tecnología
2007
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| Online Access: | http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S1665-64232007000100005 |
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