Optical characterization of Te-doped Ga xIn1-xAs ySb1-y epitaxial layers grown by liquid phase epitaxy

A set of Ga xIn1-xAs ySb1-y quaternary layers were grown on (100) GaSb substrates using the liquid phase epitaxy technique (LPE). These layers were doped with tellurium and were characterized by Raman, Photoluminescence (PL) spectroscopy, and Secondary Ion Mass Spectroscopy (SIMS). Several optical modes were identified by performing Raman spectroscopy characterization at room temperature and observing the effect of the impurity concentration on the Raman mode frequencies. From secondary ion mass spectrometry the concentrations of Te in the liquid solutions and the electron densities present in the layers were obtained. Finally, these last results were compared with those obtained from low temperature photoluminescence spectroscopy measurements at low temperatures on this set of samples.

Bibliographic Details

Main Authors:	Bravo-García,Y. E., Zapata-Torres,M., Rodríguez-Fragoso,P., Mendoza-Alvarez,J.G., Herrera-Pérez,J. L., Cardona-Bedoya,J. A., Gómez-Herrera,M. L.
Format:	Digital revista
Language:	English
Published:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2012
Online Access:	http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S1665-35212012000300006
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