Electron-phonon scattering in graded quantum dots
Theoretical calculations of electron-phonon scattering rates in GaAs/Al xGa1 - xAs spherical quantum dots have been performed by means of effective mass approximation in the frame of finite element method. The influence of a roughness interface and external magnetic fields are analysed for different scattering rate transition. Our results open interesting channels for electron dephasing times manipulation.
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| Main Authors: | , , , |
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| Format: | Digital revista |
| Language: | English |
| Published: |
Sociedade Brasileira de Física
2006
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| Online Access: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300037 |
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