Physical properties of reactive RF sputtered a-IZON thin films

Abstract The physical properties of amorphous indium zinc oxynitride (a-IZON) thin films, which were deposited at room temperature by reactive RF magnetron sputtering, were investigated. The results of the investigations indicated that the a-IZON films possessed excellent qualities: high transparency with a very low resistivity from 10 - 3 Ω ⋅cm to 10 - 4 Ω ⋅cm, while the carrier concentration showed values over 10 20 cm ​ - 3 with mobility between 10 and 21 cm ​ 2 ⋅V ​ - 1 ⋅s ​ - 1. The incorporated nitrogen reduces the typical crystallization of IZO and favors the deposition of transparent thin films. These results show that the IZON is an ideal amorphous material for applications in transparent and flexible optoelectronic devices.

Bibliographic Details

Main Authors:	Ortega,J.J., Escobedo-Galván,C.R., Avelar-Muñoz,F., Ortiz-Hernández,A. A., Tototzintle-Huitle,H., Falcony,C., Araiza,J.J.
Format:	Digital revista
Language:	English
Published:	Sociedad Mexicana de Física 2019
Online Access:	http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2019000200133
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