Dependence of exchange bias in NiFe/NiO bilayers on film thickness

Abstract Here we report on the effect of the ferromagnetic (FM) and antiferromagnetic (AF) films thicknesses on the exchange bias field in a FM/AF bilayer. For this, a series of NiFe(t NiFe)/NiO(t NiO) bilayers were grown by DC magnetron sputtering onto commercial Si(001) wafers. Magneto-optical hysteresis loops were used as probes to measure the exchange-bias field, and the coercivity field, as functions of the in-plane angle, φ H, and the films’ thicknesses, t NiFe and t NiO. The in-plane symmetry of the exchange field and coercivity display unidirectional and uniaxial anisotropies, with angular dependences different from the simple c o s φ H and c o s 2 φ H, respectively. These symmetries are intrinsically sensitive to the thickness of both NiFe and NiO layers. With respect to the FM layer thickness, the exchange bias and coercivity field follow the usual 1/t NiFe, while the dependence on the thickness of the AF layer is more complicated, and is characterized by a critical behavior.

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Bibliographic Details
Main Author: Fermin,José R.
Format: Digital revista
Language:English
Published: Sociedad Mexicana de Física 2017
Online Access:http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2017000200145
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