Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis

The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450°C as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows an unexpected behavior in function of the deposition temperature. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas. 70nm-thick ZnO was deposited over 100 nm-thick aluminum electrodes patterned on 50 nm-thick thermally grown SiO2 on highly doped Si wafers. The highly doped Si wafer was used as the gate electrode. The ZnO TFTs at 250°C showed field-effect mobilities around of 0.05 cm²/Vs and threshold voltages of 8 V.

Bibliographic Details

Main Authors:	Dominguez-Jimenez,M.A., Flores-Gracia,F., Luna-Flores,A., Martinez-Juarez,J., Luna-Lopez,J.A., Alcantara-Iniesta,S., Rosales-Quintero,P., Reyes-Betanzo,C.
Format:	Digital revista
Language:	English
Published:	Sociedad Mexicana de Física 2015
Online Access:	http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2015000200007
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