Chemical sensitivity of Mo gate MOS capacitors
Mo gate MOS capacitors exhibit a negative shift of their C-V characteristic by up to 240 mV, at 125°C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relevant equivalent circuits are reviewed. The single-state interface state density, at the semiconductor-dielectric interface, decreases from 2.66 10(11) cm-2e-v-1, in pure nitrogen, to 2.5 10(11)cm-2e-v-1 in 1000 ppm hydrogen in nitrogen mixtures, at this temperature.
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| Main Authors: | , |
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| Format: | Digital revista |
| Language: | English |
| Published: |
Sociedad Mexicana de Física
2006
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| Online Access: | http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2006000800004 |
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