Crystallization behaviour of amorphous Ge(1 - x)Sbx thin films
The crystallization behaviour of amorphous Ge1-xSbx thin films, deposited by sputtering at three compositions: x = 0.68, 0.73 and 0.84 have been studied. The crystallization has been induced by annealing in vacuum and monitored by optical absorption. Samples have been characterized by X-ray diffraction, energy-dispersive X-ray and transmission electron microscopy. The crystallization temperature, Θc, is composition-depndent and decreases with Sb content. In the crystallization process, three composition intervals can be distinguished. At high Ge content, x ≤ 0.6, crystallization leads to two separated phases, c-Ge and c-Sb. At x {reversed tilde equals} 0.68 Sb crystallizes in a first step followed by Ge crystallization. At x ≥ 0.73, only Sb crystallizes and for the eutectic composition, x = 0.84, Sb crystallizes with [0 0 1] zone axis perpendicular to the film surface as found in pure Sb films. © 1995.
| Main Authors: | , , |
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| Format: | artículo biblioteca |
| Language: | English |
| Published: |
Elsevier
1995
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| Online Access: | http://hdl.handle.net/10261/88429 |
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