Metal Impurities in Silicon-Device Fabrication [electronic resource] /

Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. The monograph provides a thorough review of the results of recent scientific investigations, as well as of the relevant data and properties of the various metal impurities in silicon.

Bibliographic Details

Main Authors:	Graff, Klaus. author., SpringerLink (Online service)
Format:	Texto biblioteca
Language:	eng
Published:	Berlin, Heidelberg : Springer Berlin Heidelberg, 1995
Subjects:	Materials science., Inorganic chemistry., Electronics., Microelectronics., Materials, Thin films., Materials Science., Surfaces and Interfaces, Thin Films., Electronics and Microelectronics, Instrumentation., Inorganic Chemistry.,
Online Access:	http://dx.doi.org/10.1007/978-3-642-97593-6
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