Semiconductor Nanocrystals of InP@ZnS: Synthesis and Characterization

Semiconductor Nanocrystals of InP@ZnS: Synthesis and Characterization

Colloidal dispersions of InP@ZnS nanoparticles were prepared using a single-step heating-up method relying at low temperature. The obtained particles are highly crystalline, monodisperse and exhibit size-dependent radiative emission in the range of 329−480 nm. By simply varying the concentration of the molecular precursor, the particles size can be controlled in the range from about 1.1 to 4.5 nm. The formation of InP nanocrystals has been confirmed using the techniques TEM, HRTEM, PL and UV-Vis spectroscopy.

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Bibliographic Details
Main Authors: Arias-Cerón,J. S., González-Araoz,M. P., Bautista-Hernández,A., Sánchez Ramírez,J. F., Herrera-Pérez,J. L., Mendoza-Álvarez,J. G.
Format: Digital revista
Language:English
Published: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2012
Online Access:http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S1665-35212012000200013
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http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S1665-35212012000200013

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