Determination of optical constants of Zn xIn1-xSe thin films deposited by evaporation
Polycrystalline Zn xIn1-xSe thin films with Se contents varying between x=0 (InSe) and x=1 (ZnSe), deposited on glass substrates, were optically characterized. These samples were grown by coevaporation of the ZnSe and In2Se3 compounds using a crucible constituted by two coaxial chambers. The optical constants (refractive index n, absorption coefficient a and optical gap Eg) and the film thickness d, were determined using the transmission spectrum and simple calculations based on a theoretical model including interference effect induced by multiple internal reflections in the substrate/film system. The reliability of the results was tested by comparing the experimental transmittance spectra with the theoretically ones, using values of n, α and d obtained experimentally.
| Principais autores: | , , |
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| Formato: | Digital revista |
| Idioma: | English |
| Publicado em: |
Sociedad Mexicana de Física
2003
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| Acesso em linha: | http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2003000400006 |
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