Thermalization process of a photo-generated plasma in semiconductors
The kinetics of ultra-fast processes which leads to the thermalization condition of a photo-excited plasma in semiconductor systems is studied theoretically. We analyze the time evolution of a carrier population generated by a finite optical pulse, from the beginning of the pulse until the time in which the carrier population reaches a quasi-equilibrium condition. We calculate the energy fluxes caused by the main interaction mechanisms along the different stages the system passes through. Our analysis is done by using a set of non-linear rate equations which govern the time evolution of the carrier population in the energy space. We consider the main interaction mechanisms, including dynamic screening and phonon population effects.
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| Autores principales: | , |
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| Formato: | Digital revista |
| Idioma: | English |
| Publicado: |
Sociedad Mexicana de Física
2002
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| Acceso en línea: | http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2002000100011 |
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