Analytical Methods High-Melting Metals [electronic resource] /

In solid state physics and in materials science the investigation of the connection between the properties of solids and their microstructure is of major importance. For crystalline materials this connection is related to the lattice structure, and it can be shown convinc­ ingly that the material properties depend on deviations from the ideal lattice structure in the majority of cases. For this reason a reliable detection and analysis of defects in "nearly perfect" crystals is necessary, and a sufficient spatial resolution of the methods applied is required. Because electrons on the one hand strongly interact with the matter to be investigated and on the other hand can easily be focused electron-optical methods are very advantageous for this purpose. They are used in the diffraction mode, in the imaging mode and in the spectroscopic mode. The attainable high lateral resolution in the imaging mode makes the application of electron microscopy especially effective. Although already valuable information on crystal defects can be gained by using the routine technique of diffraction contrast imagingl-3) which has a resolution of some 4 10 nm - in the special weak-beam technique ) of some nm -, the detection of crystal defects and inhomogeneities, resp. on an atomic or molecular level by the aid of high­ resolution electron microscopy gets increasing importance.

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Main Authors: Freyhardt, H. C. editor., SpringerLink (Online service)
Format: Texto biblioteca
Language:eng
Published: Berlin, Heidelberg : Springer Berlin Heidelberg, 1982
Subjects:Chemistry., Inorganic chemistry., Physical chemistry., Inorganic Chemistry., Physical Chemistry.,
Online Access:http://dx.doi.org/10.1007/978-3-642-68731-0
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spelling KOHA-OAI-TEST:1711572018-07-30T22:48:07ZAnalytical Methods High-Melting Metals [electronic resource] / Freyhardt, H. C. editor. SpringerLink (Online service) textBerlin, Heidelberg : Springer Berlin Heidelberg,1982.engIn solid state physics and in materials science the investigation of the connection between the properties of solids and their microstructure is of major importance. For crystalline materials this connection is related to the lattice structure, and it can be shown convinc­ ingly that the material properties depend on deviations from the ideal lattice structure in the majority of cases. For this reason a reliable detection and analysis of defects in "nearly perfect" crystals is necessary, and a sufficient spatial resolution of the methods applied is required. Because electrons on the one hand strongly interact with the matter to be investigated and on the other hand can easily be focused electron-optical methods are very advantageous for this purpose. They are used in the diffraction mode, in the imaging mode and in the spectroscopic mode. The attainable high lateral resolution in the imaging mode makes the application of electron microscopy especially effective. Although already valuable information on crystal defects can be gained by using the routine technique of diffraction contrast imagingl-3) which has a resolution of some 4 10 nm - in the special weak-beam technique ) of some nm -, the detection of crystal defects and inhomogeneities, resp. on an atomic or molecular level by the aid of high­ resolution electron microscopy gets increasing importance.High-Resolution Electron Microscopy of Crystals -- In-situ UHV Electron Microscopy of Surfaces -- EXAFS Studies of Crystalline Materials -- Single Crystals of Refractory and Rare Metals, Alloys, and Compounds -- Author Index Volumes 1–7.In solid state physics and in materials science the investigation of the connection between the properties of solids and their microstructure is of major importance. For crystalline materials this connection is related to the lattice structure, and it can be shown convinc­ ingly that the material properties depend on deviations from the ideal lattice structure in the majority of cases. For this reason a reliable detection and analysis of defects in "nearly perfect" crystals is necessary, and a sufficient spatial resolution of the methods applied is required. Because electrons on the one hand strongly interact with the matter to be investigated and on the other hand can easily be focused electron-optical methods are very advantageous for this purpose. They are used in the diffraction mode, in the imaging mode and in the spectroscopic mode. The attainable high lateral resolution in the imaging mode makes the application of electron microscopy especially effective. Although already valuable information on crystal defects can be gained by using the routine technique of diffraction contrast imagingl-3) which has a resolution of some 4 10 nm - in the special weak-beam technique ) of some nm -, the detection of crystal defects and inhomogeneities, resp. on an atomic or molecular level by the aid of high­ resolution electron microscopy gets increasing importance.Chemistry.Inorganic chemistry.Physical chemistry.Chemistry.Inorganic Chemistry.Physical Chemistry.Springer eBookshttp://dx.doi.org/10.1007/978-3-642-68731-0URN:ISBN:9783642687310
institution COLPOS
collection Koha
country México
countrycode MX
component Bibliográfico
access En linea
En linea
databasecode cat-colpos
tag biblioteca
region America del Norte
libraryname Departamento de documentación y biblioteca de COLPOS
language eng
topic Chemistry.
Inorganic chemistry.
Physical chemistry.
Chemistry.
Inorganic Chemistry.
Physical Chemistry.
Chemistry.
Inorganic chemistry.
Physical chemistry.
Chemistry.
Inorganic Chemistry.
Physical Chemistry.
spellingShingle Chemistry.
Inorganic chemistry.
Physical chemistry.
Chemistry.
Inorganic Chemistry.
Physical Chemistry.
Chemistry.
Inorganic chemistry.
Physical chemistry.
Chemistry.
Inorganic Chemistry.
Physical Chemistry.
Freyhardt, H. C. editor.
SpringerLink (Online service)
Analytical Methods High-Melting Metals [electronic resource] /
description In solid state physics and in materials science the investigation of the connection between the properties of solids and their microstructure is of major importance. For crystalline materials this connection is related to the lattice structure, and it can be shown convinc­ ingly that the material properties depend on deviations from the ideal lattice structure in the majority of cases. For this reason a reliable detection and analysis of defects in "nearly perfect" crystals is necessary, and a sufficient spatial resolution of the methods applied is required. Because electrons on the one hand strongly interact with the matter to be investigated and on the other hand can easily be focused electron-optical methods are very advantageous for this purpose. They are used in the diffraction mode, in the imaging mode and in the spectroscopic mode. The attainable high lateral resolution in the imaging mode makes the application of electron microscopy especially effective. Although already valuable information on crystal defects can be gained by using the routine technique of diffraction contrast imagingl-3) which has a resolution of some 4 10 nm - in the special weak-beam technique ) of some nm -, the detection of crystal defects and inhomogeneities, resp. on an atomic or molecular level by the aid of high­ resolution electron microscopy gets increasing importance.
format Texto
topic_facet Chemistry.
Inorganic chemistry.
Physical chemistry.
Chemistry.
Inorganic Chemistry.
Physical Chemistry.
author Freyhardt, H. C. editor.
SpringerLink (Online service)
author_facet Freyhardt, H. C. editor.
SpringerLink (Online service)
author_sort Freyhardt, H. C. editor.
title Analytical Methods High-Melting Metals [electronic resource] /
title_short Analytical Methods High-Melting Metals [electronic resource] /
title_full Analytical Methods High-Melting Metals [electronic resource] /
title_fullStr Analytical Methods High-Melting Metals [electronic resource] /
title_full_unstemmed Analytical Methods High-Melting Metals [electronic resource] /
title_sort analytical methods high-melting metals [electronic resource] /
publisher Berlin, Heidelberg : Springer Berlin Heidelberg,
publishDate 1982
url http://dx.doi.org/10.1007/978-3-642-68731-0
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